PART |
Description |
Maker |
MX25L25639FZ4W08G |
3V 256M-BIT [x 1/x 4] CMOS MXSMIO? (SERIAL MULTI I/O)
|
Macronix International
|
MX25L25735F MX25L25735FMI10G MX25L25735FZ2I10G |
3V 256M-BIT [x 1/x 2/x 4] CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
MX25U25635F MX25U25635FZ4I08G MX25U25635FZ4I10G MX |
1.8V 256M-BIT [x 1/x 2/x 4] CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY 1.8V 256M-BIT [x 1/x 2/x 4] CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
HM5425801B |
256M SSTL_2 interface DDR SDRAM(256M SSTL_2接口 DDR 同步DRAM) 256M DDR SDRAM的接口SSTL_256M SSTL_2接口的DDR同步DRAM)的
|
Hitachi,Ltd.
|
HM5425161BTT-10 HM5425401BTT-10 HM5425801BTT-10 HM |
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank/ 16-Mword 4-bit 4-bank 16M X 16 DDR DRAM, 0.75 ns, PDSO66 256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank/ 16-Mword 4-bit 4-bank 64M X 4 DDR DRAM, 0.75 ns, PDSO66 256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank/ 16-Mword 4-bit 4-bank 256M SSTL_2 DDR SDRAM的接43 MHz/133 MHz/125 MHz/100 MHz Mword6位-bank/8-Mword位银行/ 16 Mword位 -银行 256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword × 16-bit × 4-bank/8-Mword × 8-bit × 4-bank/ 16-Mword × 4-bit × 4-bank
|
Elpida Memory, Inc.
|
K9K2G08U0M-F K9K2G08U0M-V K9K2G08Q0M-P K9K2G08Q0M- |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K9K2G08U0M K9K2G08U0M-YCB0 K9K2G16U0M-PCB0 K9K2G16 |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
HM5225165BTT-75 HM5225405BTT-75 HM5225805BTT-75 HM |
256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword ??16-bit ??4-bank/8-Mword ??8-bit ??4-bank /16-Mword ??4-bit ??4-bank PC/133, PC/100 SDRAM 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank /16-Mword 4-bit 4-bank PC/133, PC/100 SDRAM 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank /16-Mword 4-bit 4-bank PC/133, PC/100 SDRAM 256M LVTTL接口SDRAM33 MHz/100 MHz4 Mword16位4-bank/8-Mword位4银行/ 16 Mword4位4银行PC/133,电 100内存 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank /16-Mword 4-bit 4-bank PC/133, PC/100 SDRAM 256M LVTTL接口SDRAM33 MHz/100 MHz Mword6位-bank/8-Mword位银行/ 16 Mword位银行PC/133,电 100内存 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank /16-Mword 4-bit 4-bank PC/133, PC/100 SDRAM 32M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank /16-Mword 4-bit 4-bank PC/133, PC/100 SDRAM 256M LVTTL接口SDRAM33 MHz/100 MHz Mword16位-bank/8-Mword位银行/ 16 Mword位银行PC/133,电 100内存 Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; Number of Contacts:30; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight Ultra-High-Precision SOT23 Series Voltage Reference POT 5K OHM 9MM HORZ NO BUSHING Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; Number of Contacts:32; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight Circular Connector; Body Material:Aluminum; Series:PT06; Number of Contacts:30; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Circular Contact Gender:Socket; Insert Arrangement:18-30 Circular Connector; No. of Contacts:11; Series:; Body Material:Aluminum; Connecting Termination:Solder; Connector Shell Size:18; Circular Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:18-11 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank /16-Mword 4-bit 4-bank PC/133/ PC/100 SDRAM POT 20K OHM 9MM HORZ NO BUSHING 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword × 16-bit × 4-bank/8-Mword × 8-bit × 4-bank /16-Mword × 4-bit × 4-bank PC/133, PC/100 SDRAM
|
Elpida Memory, Inc. http://
|
M38067MC-453GP M38063M6-181GP M38067MC-204FP M3806 |
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER Single Chip 8-Bit CMOS Microcomputer Single Chip 8-bit Microcomputer 3806 Series Microcontrollers: General Purpose, Large On-Chip Memory RAM size: 1024bytes; single-chip 8-bit CMOS microcomputer RAM size: 192bytes; single-chip 8-bit CMOS microcomputer RAM size: 256bytes; single-chip 8-bit CMOS microcomputer RAM size: 384bytes; single-chip 8-bit CMOS microcomputer RAM size: 512bytes; single-chip 8-bit CMOS microcomputer RAM size: 640bytes; single-chip 8-bit CMOS microcomputer RAM size: 768bytes; single-chip 8-bit CMOS microcomputer RAM size: 896bytes; single-chip 8-bit CMOS microcomputer
|
Mitsubishi Electric Corporation
|
UPD23C256112AGY-XXX-MKH 23C256 UPD23C256112A UPD23 |
NAND INTERFACE 256M-BIT MASK-PROGRAMMABLE ROM
|
NEC[NEC]
|
W29GL256SH9C W29GL256SL9B W29GL256SL9C W29GL256SH9 |
256M-BIT 3.0-VOLT PARALLEL FLASH MEMORY WITH PAGE MODE
|
Winbond
|
M38259EFDFP M38258E4-FP M38258E4-FS M38258E4-GP M3 |
3825 Series Microcontrollers: On-Chip Segment LCDDrivers with A-D Converter RAM size: 1536 bytes; single-chip 8-bit CMOS microcomputer RAM size: 192 bytes; single-chip 8-bit CMOS microcomputer RAM size: 256 bytes; single-chip 8-bit CMOS microcomputer RAM size: 384 bytes; single-chip 8-bit CMOS microcomputer RAM size: 512 bytes; single-chip 8-bit CMOS microcomputer RAM size: 1024 bytes; single-chip 8-bit CMOS microcomputer RAM size: 640 bytes; single-chip 8-bit CMOS microcomputer RAM size: 768 bytes; single-chip 8-bit CMOS microcomputer RAM size: 896 bytes; single-chip 8-bit CMOS microcomputer RAM size: 2048 bytes; single-chip 8-bit CMOS microcomputer
|
Mitsubishi Electric Corporation
|